egf1t document number 88904 12-aug-05 vishay general semiconductor www.vishay.com 1 p a t e n t e d * ? do-214ba (gf1) * glass-plastic encapsulation technique is covered by patent no. 3,996,602, brazed-lead assembly by patent no. 3,930,306 and lead forming by patent no. 5,151,846 new product surface mount glass passivat ed ultrafast rectifier major ratings and characteristics i f(av) 1.0 a v rrm 1300 v i fsm 20 a t rr 75 ns e as 15 mj t j max. 150 c features cavity-free glass-passivated junction ideal for automated placement ultrafast reverse recovery time low switching losse s, high efficiency avalanche surge energy capability meets environmental standard mil-s-19500 meets msl level 1, per j-std-020c solder dip 260 c, 40 seconds typical applications for use in high voltage rectification of photoflash application mechanical data case: do-214ba, molded plastic over glass body epoxy meets ul-94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes cathode end maximum ratings t a = 25 c unless otherwise specified parameter symbol egf1t unit device marking code et maximum repetitive peak reverse voltage v rrm 1300 v maximum rms voltage v rms 910 v maximum dc blocking v dc 1300 v maximum average forward rectified current i f(av) 1.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 20 a non-repetitive avalanche energy at t a = 25 c, i as = 1a, l = 30 mh e as 15 mj operating junction and storage temperature range t j ,t stg - 55 to + 150 c
www.vishay.com 2 document number 88904 12-aug-05 egf1t vishay general semiconductor electrical characteristics t a = 25 c unless otherwise specified notes: (1) pulse test: 300 s pulse width, 1 % duty cycle thermal characteristics t a = 25 c unless otherwise specified notes: (1) thermal resistance from junction to am bient and from junction to lead, p.c.b. mounted on 0.95 x 0.95" (24 x 24 mm) copper p ad areas ratings and characteristics curves (t a = 25 c unless otherwise specified) parameter test condition symbol egf1t unit maximum instantaneous at 1.0 a, t j = 25 c v f 3.0 v maximum dc reverse current at v rm (1) t j = 25 c t j = 125 c i r 5.0 50 a typical reverse recovery time at i f = 0.5 a, i r =1.0 a, i rr = 0.25 a t rr 75 ns typical junction capacitance at 4.0 v, 1 mhz c j 8.0 pf parameter symbol egf1t unit typical thermal resistance (1) r ja r jl 50 20 c/w figure 1. maximum forward current derating curve 0.0 1.5 25 50 75 100 125 150 175 average forward current (a) ti - lead temperature ( c) 0.5 1.0 figure 2. maximum non-repetitive forward surge current for w ard s u rge c u rrent ( a ) 25 20 15 10 5 0 110 100 nu m b er of cycles
egf1t document number 88904 12-aug-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical revers e leakage characteristics 0.01 0.1 1 10 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 instantaneo u s for w ard v oltage ( v ) inst an taneo u s for w ard c u rrent ( a ) tj=25c tj=125c tj=150c 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 8 0 90 100 percent of rated re v erse v oltage ( % ) instantaneo u s re v erse leakage c u rrent ( u a ) tj=25c tj = 125 c tj=150c figure 5. typical junc tion capacitance per leg figure 6. typical trans ient thermal impedance 1 10 100 0.1 1 10 100 re v erse v oltage ( v ) j u nction capacitance ( pf ) 1 10 100 0.1 1 10 100 p u lse d u ration , sec . ( t ) transient thermal impedance ( c/ w ) 0.167 (4.24) 0.1 8 7 (4.75) 0.0065 (0.17) 0.015 (0.3 8 ) 0.030 (0.76) 0.060 (1.52) 0.196 (4.9 8 ) 0.226 (5.74) 0.094 (2.39) 0.114 (2.90) 0.100 (2.54) 0.11 8 (3.00) 0.040 (1.02) 0.066 (1.6 8 ) 0.09 8 (2.49) 0.10 8 (2.74) 0.006 (0.152) typ. do-214ba (gf1) 0.076 max. (1.93 max.) 0.220 (5.5 8 )ref 0.060 mi n . (1.52 mi n .) mountin g pad layout cathode band 0.066 mi n . (1.6 8 mi n .)
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